hot carrier
英 [hɒt ˈkæriə(r)]
美 [hɑːt ˈkæriər]
网络 热载流子; 热载子; 有热载子; 热电子
双语例句
- A Study of Hot Carrier Effects on Polysilicon Thin Film Transistors by Simulation
多晶硅TFT热载流子效应的模拟研究 - Evaluation of Hot Carrier Effect of SiGe HBT
SiGeHBT的热载流子效应评价 - Hot carrier effects in fluorinated short channel MOSFET have been investigated.
研究了用注F工艺制作的短沟MOSFET的热载流子效应。 - The research results indicate that with the increase of the concave corner, the negative junction depth and the doping density of channel, the hot carrier effect immunity is enhanced; the threshold voltage increases and the short channel effect is suppressed.
研究发现，随着凹槽拐角、负结深的增大和沟道杂质浓度的提高，器件的抗热载流子能力增强，阈值电压升高，对短沟道效应的抑制作用增强。 - Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.
研究了低栅电压范围的热载流子统一退化模型。 - The trapped charges and generated interface states caused by hot carrier effect lead to curve distortion of C-V characteristics, flatband voltage shift and SiO2 leakage current shift with time under constant voltage.
指出热载流子效应引起载流子陷落和界面态的产生，导致C&V特性曲线畸变、平带电压漂移和恒定电压下SiO2漏电流随时间漂移。 - Step channel direct injection ( SCDI) flash memory device which had been developed changes the hot carrier injection method by making a shallow step in the middle of channel. Therefore high speed for programming, high efficiency for injection, and lower working voltage are obtained.
研制成一种台阶沟道直接注入（SCDI）器件，通过在沟道的中间制作一个浅的台阶来改变热载流子的注入方式，从而获得了高的编程速度和注入效率，降低了工作电压。 - Hot carrier effects of MOSFET with different channel lengths have been investigated.
对同一工艺制作的几种不同沟道长度的MOSFET进行了沟道热载流子注入实验。研究了短沟MOS器件的热载流子效应与沟道长度之间的关系。 - Hot carrier effect in submicrometer MOSFET ′ s would cause device failure. This paper analyses the failure mechanism and physical model of this effect. Theoretical calculations include internal electric field, substrate current, shift of threshold voltage and transconductance.
亚微米MOSFET的热载流子效应会引起器件的失效，文中分析了热载流子效应引起器件失效的机理和物理模型，对该效应的内部电场、衬底电流、阈值电压和跨导作了计算； - This paper describes the characterization of the hot carrier induced interface traps by a forward gated diode measurement in an N channel MOSFET/ SOI.
本文完成了热载流子诱生MOSFET/SOI界面陷阱正向栅控二极管技术表征的实验研究。 - Based on the formation theories of interface traps and oxide traps in Si-SiO2, further more the influences of hot carrier injection on 1/ f γ noise are discussed thoroughly.
基于Si/SiO2界面态和氧化层陷阱形成理论，深入讨论了该类器件热载流子注入对1/fγ的影响，提出了用噪声参数S？ - Hot carrier effects under AC ( Alternating Current) stress are investigated in this paper. Alternative hot hole and hot electron injection effects on the degradation of NMOSFET ′ s under pulse stress are discussed mainly.
本文研究了交流应力下的热载流子效应，主要讨论了脉冲应力条件下的热空穴热电子交替注入对NMOSFET′s的退化产生的影响。 - The fabrication of SOI ( Silicon-on-insulator) materials is introduced. The SOI MOSFET hot carrier degradation mechanism is discussed.
介绍了绝缘体上硅（SOI）材料的制作方法，阐述了SOIMOSFET器件的热载流子注入效应的失效机理。 - Nonequilibrium phonon effects in hot carrier relaxation processes of multiple quantum well structures
多量子阱结构中热载流子弛豫过程中的非平衡声子效应 - We give a brief review of a balance-equation approach to hot carrier transport in semiconductors.
本文简略地介绍处理半导体中热载流子输运的一个解析方法&平衡方程方法。 - The effect of hot carrier effect on the analogue parameters of MOSFET.
论文分析了槽栅器件热载流子产生机理及热载流子对器件性能所造成的损伤，并对热载流子效应对器件模拟参数的影响进行了研究。 - This paper describes main failure mechanism for MOS VLSI, Thin oxide breakdown, hot carrier effect, Al-Si contact failure, electromigration and soft errors. It gives out some technical measures to prevent above-mentioned failures.
本文论述了MOSVLSI主要失效机理，即薄氧化层击穿、热载流子效应、铝－硅接触失效、电迁移以及软错误，并给出了预防上述失效的一些技术措施。 - The Effect of Hot Carrier Degradation on the MOS Devices
热载流子退化对MOS器件的影响 - Research on MOSFET Noise and Hot Carrier Effect
MOSFET噪声与热载流子效应研究 - This paper analyses the influence of hot carrier's retrogradation on integrated circuit's reliability, and studies computer simulator technology, quasi-constant voltage theory, MOS transistor of LDD structure for the prevention of hot carrier retrogradation.
分析了热载流子退化现象对集成电路可靠性的影响，研究了改善热载流子退化的计算机工艺模拟技术、按比例缩小的准恒定电压理论、LDD结构MOS晶体管。 - The principle of HC ( Hot carrier) is reviewed first in deep submicrometer MOS technologies.
述了深亚微米MOS技术中热载流子（HC）退化效应的机理。 - Study of the hot carrier reliability of the Flash Memory
闪速存储器中的热载流子可靠性研究 - Firstly, the thesis discusses some small size effects, such as short-channel and narrow-channel effects for threshold voltage, punchthrough effect and hot carrier effect ( HCE), etc.
首先，本课题讨论了阈值电压的短沟/窄沟效应、穿通效应和热载流子效应（HCE）等诸多小尺寸效应； - The Influence of Hot Carrier's Retrogradation on IC's Reliability and the Countermeasures
热载流子退化对集成电路可靠性的影响及应对 - The growth laws of hot carrier damage of PMOSFET's during the hot carrier degradation and the high field annealing are studied by direct gate current measurement.
通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET's热载流子损伤的生长规律。 - Launch window The hot carrier exchange energy with lattice by emission and absorption of phonons.
热载流子通过发射和吸收声子，与晶格进行能量交换。 - Calculation, Experience and Simulation of Hot carrier Effect in MOSFET ′ s
MOSFET中热载流子效应的计算、实验和模拟 - A balance-equation approach to hot carrier transport in semiconductors
半导体中热载流子输运的平衡方程方法 - The hot carrier effects ( HCE) in MOSFET are studied in this paper. Based on MOSFET lifetime model of direct current, we present MOSFET lifetime model of dynamic stress.
研究了MOS器件中的热载流子效应，在分析了静态应力下MOSFET寿命模型的基础上，提出了动态应力条件下MOSFET的寿命模型。 - The hot carrier effects ( HCE) in deep sub-micron devices has been studied.
对深亚微米器件中热载流子效应（HCE）进行了研究。